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ODU IGBT MODULE
MBM200GS6AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
94 4-Fast-on Terminal #110
G2 E2
EAT RES FEATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
3-M5 2-5.6
16
80 16
E2
16
C1
E1
C2E1
G1
23
7 12 6 35
23 39.5 0.8
30
C2E1
G2 E2 E2 C1 E1 G1
Weight: 200 (g)
TERMINALS
ABSOLUTE MAXIMUM RATINGS (Tc=25C ) Item
Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO -
Unit
V V A A W C C VRMS N.m (kgf.cm)
MBM200GS6AW
600 20 200 400 200 400 600 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.96(20) 1.96(20)
DC 1ms DC 1ms
12 17 25 35
(1)
Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting
(2) (3)
Notes:(1)RMS Current of Diode 60Arms max. (2)(3)Recommended Value 1.67N.m(17kgf.cm)
CHARACTERISTICS Item
(Tc=25C ) Symbol Unit Min. Typ. Max. Test Conditions
Collector Emitter Cut-Off Current I CES mA 1.0 VCE=600V,VGE=0V Gate Emitter Leakage Current IGES nA 500 VGE=20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 1.9 2.5 IC=200A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =200mA Input Capacitance Cies pF 9,700 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.2 0.4 VCC=300V ms Turn On Time ton 0.3 0.6 RL=1.5W Switching Times Fall Time tf 0.25 0.35 RG=12W (4) 0.6 0.9 VGE=15V Turn Off Time toff Peak Forward Voltage Drop VFM V 2.2 3.0 IF=200A,VGE=0V Reverse Recovery Time trr 0.3 IF=200A,VGE=-10V, di/dt=200A/ms ms Junction to case Rth(j-c) C/W 0.21 Thermal Impedance IGBT 0.5 FWD Rth(j-c) Notes:(4) RG value is the test condition's value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted.
PDE-M200GS6AW-0
400
14V VGE=15V 13V12V Tc=25C
TYPICAL
VGE=15V14V13V12V 400 Tc=125C
TYPICAL
Collector Current, Ic (A)
300 11V
Collector Current, Ic (A)
300 11V
200 Pc=600W 10V 100
200 10V
100 9V
9V 0 0 2 4 6 8 10 0 0 2 4 6 8 10
Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage
TYPICAL 10 Tc=25C
Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage
TYPICAL 10 Tc=125C
Collector to Emitter Voltage, VCE (V)
Collector to Emitter Voltage, VCE (V)
8
8
6
6
4 Ic =400A 2 Ic =200A
4
Ic =400A
2
Ic =200A
0 0 5 10 15 20
0 0 5 10 15 20
Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage
TYPICAL 20 Vcc=300V Ic =200A Tc=25C
Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage
400 VGE=0 Tc=25C Tc=125C
TYPICAL
Gate to Emitter Voltage, VGE (V)
Forward Current, IF (A)
15
300
10
200
5
100
0 0 200 400 600 800 1000
0
0
1
2
3
4
5
Gate Charge, QG (nc) Gate charge characteristics
Forward Voltage, VF (V) Forward voltage of free-wheeling diode
PDE-M200GS6AW-0
TYPICAL 1.5 Vcc=300V VGE=15V RG=12W TC=25C Resistive Load
TYPICAL 10 VCC=300V VGE=15V IC=200A TC=25C Resistive Load
Switching Time, t (ms)
1.0
Switching Time, t (ms)
1
toff
toff 0.5 ton tf tr 0 0 50 100 150 200 250
ton
tf tr 0.1 1 10 100
Collector Current, IC (A) Switching time vs. Collector current
TYPICAL 20 Vcc=300V VGE=15V RG=12W TC=125C Inductive Load 100
Gate Resistance, RG (W) Switching time vs. Gate resistance
TYPICAL VCC=300V VGE=15V IC =200A TC=125C Inductive Load Etoff Eton
Switching Loss, Eton,Etoff, Err (mJ/pulse)
15
Etoff
10
Eton
Switching Loss, Eton, Etoff (mJ/pulse)
10
5
Err
Err 0 0 50 100 150 200 250
1 1 10 100
Collector Current, IC (A) Switching loss vs. Collector current
Gate Resistance, RG (W) Switching loss vs. Gate resistance
Transient Thermal Impedance, Rth(j-c) (C/W)
1000
1 Diode IGBT
100
Collector Current, Ic (A)
VGE=15V RG=12W TC125C
0.1
10
0.01
1
0.1 0 100 200 300 400 500 600 700
0.001 0.001
0.01
0.1
1
10
Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area
Time, t (s) Transient thermal impedance
PDE-M200GS6AW-0
HITACHI POWER SEMICONDUCTORS Notices
1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse

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